III-nitride semiconductor light-emitting device and method for manufacturing same

The invention relates to a III-nitride semiconductor light-emitting device and a method for manufacturing the same. The invention provides a III-nitride semiconductor light-emitting device comprising a covering layer and a connection layer. The device is aimed at inhibiting the increase of driving voltage. A method for manufacturing the light-emitting device is disclosed. The III-nitride semiconductor light-emitting device comprises a semiconductor layer, a p electrode and the covering layer formed on the surface, which is opposite to the semiconductor layer, of the p electrode. The covering layer is formed by stacking an adhesive layer and a first metal covering layer on the p electrode in order. The adhesive layer is made of material containing oxide formation free energy of -500kJ/mole to -100kJ/mole. The first metal covering layer comprises oxide formation free energy of more than -100kJ/mole.