Old Web
English
Sign In
Acemap
>
Paper
>
Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics
Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics
2016
Koji Kita
Hirohisa Hirai
Hiroyuki Kajifusa
Keywords:
Nanotechnology
Thermal oxidation
Materials science
Inorganic chemistry
post oxidation
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]