A full colour LCD addressed by poly Si TFTS fabricated at low temperature below 450 degrees C

A process below 450 degrees C has been developed for poly-Si thin-film transistor (TFTs). The devices have higher mobility ( approximately 50 cm/sup 2//V-s) and higher reliability than a-Si TFTs. A 3.5-in. full-colour liquid-crystal display addressed by these poly-Si TFTs is described. >