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GaN Etch Rates Compared with Atomic Chlorine Density and Ion Flux in an Argon/Chlorine Inductively Coupled Plasma
GaN Etch Rates Compared with Atomic Chlorine Density and Ion Flux in an Argon/Chlorine Inductively Coupled Plasma
2004
Charles Mahony
Syed A. Rizvi
Paul Maguire
Frederick Garcia
William G. Graham
Keywords:
Inductively coupled plasma mass spectrometry
Flux
Laser-induced fluorescence
Inductively coupled plasma
Analytical chemistry
Ion
Inductively coupled plasma atomic emission spectroscopy
Argon
Chlorine
Chemistry
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