Compressively-strained InGaAsP-active (/spl lambda/=0.78-0.85 /spl mu/m) regions for VCSELs

Compressively-strained (CS) InGaAsP (/spl lambda/=0.78-0.85 /spl mu/m) QW-active regions are evaluated from broad-area edge-emitting diode lasers. High T/sub 0/, T/sub 1/ values make them useful for high-temperature/high-power applications. Preliminary results are reported on proton-implanted AlGaAs/AlAs-DBR VCSELs with (CS) InGaAsP/InGaP active regions emitting at /spl lambda/=0.78 /spl mu/m.