A method of manufacturing a semiconductor element

A method of manufacturing a semiconductor element comprising the step of activating a doped layer region, were introduced into the impurities by a laser beam, wherein upon activation of the doped layer region includes a plurality of laser irradiation devices, each of which performs the irradiation with a pulsed laser beam, a successive irradiation the doped layer region for each irradiation surface thereof with a plurality of pulsed beams, comprising a first pulsed laser beam of a first laser beam device and a second pulsed laser beam of a second laser beam device performs and thereby activates the doped layer region; and wherein the pulsed beam has a rectangular pulse shape with the same irradiation energy density and the same half-value width and a local overlap relationship have with respect to the doped layer region between 50% and 98% and a time delay from emitting the first pulsed laser beam of the first laser device to the emission of the second pulsed laser beam of the second laser beam device between 0 ns and 5000 ns or between 0 ns and 10000 ns when using a YAG laser device ...