Composition dependence of transverse piezoelectric properties of preferentially {110}-oriented (1−x) PIN-x PT thin films

Abstract {110}-preferentially oriented thin films of lead based perovskite solid solutions consisting of lead indium niobate (PIN) and lead titanate (PT), (1−x) PIN- x PT, x  = 0.36–0.40 having compositions near the morphotropic phase boundary (MPB), and having a thickness of 2.0 μm, were prepared on silicon substrates (111)Pt/Ti/SiO 2 /Si by a chemical solution deposition technique. In the thin films, crystallographic orientation and crystalline phase were analysed by X-ray diffraction and Raman spectroscopy respectively. In this study, we also report through Raman spectral investigation, stabilisation of discrete rhombohedral, monoclinic and tetragonal crystalline phases as the thin film composition is varied across the morphotropic phase boundary. The electric field induced mechanical strain and polarisation characteristics of the {110}-oriented PIN-PT thin films have been determined under unipolar and bipolar excitation. Transverse piezoelectric coefficient, e 31,f of the thin films have been correlated with their crystal structure.