Electrical Properties of Crystalline Ba0.5Sr0.5TiO3 Thin Films

Thin Ba0.5Sr0.5TiO3 (BST) films on p-type Si (100) using The Chemical Solution Deposition (CSD) method. X-ray diffraction (XRD), Scanning electron microscopy (SEM), C-V meter analysis measurement were employed to characterise the films. The growth condition to obtain enough quality epitaxial of Ba0.5Sr0.5TiO3 carried out by spin coating at 3000 rpm for 30 seconds, and then annealing at 900oC for 15 hours. The structure and crystallinity of thin films were investigated by XRD preffered orientation (100), (010); (110), (111), (200), surface analysis by SEM magnification x10000 thin films were heterogen and thickness film 1100 nm; electrical characterization Ba0.5Sr0.5TiO3 at MFS (Metal Ferroelectric Semiconductor) structure in room temperature (300 K) by carried out capacitance flat band (CFB) for frequency 10 KHz and 100 KHz were 206 pF and 187 pF, dielectric constant for frequency 10 KHz and 100 KHz were 132.67 and 117.22, dielectric loss minimum for frequency 10 KHz and 100 KHz were 5.37 % and 6.43 % respectively.