The modulated-gate FET-a novel MOSFET structure exhibiting controlled negative resistance

In a study of MOSFET structures that have a resistive gate, devices were fabricated using undoped polysilicon as the gate electrode. When the distribution of the channel charge was varied by changing the drain voltage, the induced gate charge varied. It was found that, in these structures the induced gate charge makes a major contribution to the local conductivity of the gate. The local value of gate resistance is modulated by changes of channel charge. if a current flows in the gate, then the gate potential distribution is changed when V/sub DS/ is varied. Under suitable operating conditions an increase in drain voltage can lead to a decreasing or vanishing drain current. >