Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers

The authors have grown wafers with 16 zero-net-strain and conventionally strained In/sub 0.68/Ga/sub 0.32/As quantum wells and eight strain-compensated In/sub 0.84/Ga/sub 0.16/As/sub 0.68/P/sub 0.32/ quantum wells. Buried heterostructure lasers were fabricated and reliability studies have been carried out. Initial estimates give lifetimes of around 100 years.