重离子辐照SiO 2 通过能量损失产生发光色心的研究

SiO2 single crystals that irradiated with 600 keV,4 MeV and 5 MeV Kr ions were investigated in 320 kV high voltage Experimental Platform(IMP,Lanzhou) by infrared spectra and fluorescence spectroscopes.In the low-energy region,single ion tracks are well separated and the damage process is dominated by the formation of simple color centers such as F2 centers.For the high energy ions,the energy density in ion tracks produced at high stopping power is larger,and consequently the defect concentration increases significantly.At higher defect densities,the distance between single defects is smaller facilitating aggregation of individual electron centers to defect clusters and also defect annihilation by recombination of hole and electron centers.The latter process determines the limited efficiency of color-center creation under heavy-ion irradiation.Using the unified thermal spike model,it is possible to fully describe the experimental data,which clearly demonstrate a synergy between the nuclear energy loss and the electronic energy loss.