Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

Effect of parameters of the AlGaAs-(AlGa) x O y layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al0.97Ga0.03As layer results in a decrease in the intensity of “whispering gallery mode” lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.