Characteristics of a 1200 V CSTBT optimized for industrial applications

The design of power semiconductor chips has always involved a trade-off between switching speed, static losses, safe operating area and short-circuit withstanding capability. This paper presents an optimized structure for 1200 V IGBTs from the viewpoint of all-round performance. The new device is based on a novel wide cell pitch carrier stored trench bipolar transistor (CSTBT). Unlike conventional trench gate IGBTs, this structure simultaneously achieves both low on-state voltage and the rugged short-circuit capability desired for industrial applications.