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Analysis of sidegate effect by 2D device simulation in AlGaN/GaN HEMT with different traps
Analysis of sidegate effect by 2D device simulation in AlGaN/GaN HEMT with different traps
2021
Kaito Ito
Toshiyuki Oishi
Keywords:
High-electron-mobility transistor
Materials science
device simulation
Optoelectronics
algan gan
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