Old Web
English
Sign In
Acemap
>
Paper
>
Achieving Low Doped (<1016) GaN with Large Breakdown Voltages (~1000 V)
Achieving Low Doped (<1016) GaN with Large Breakdown Voltages (~1000 V)
2013
Randy P. Tompkins
Joshua R. Smith
Michael A. Derenge
Kevin W. Kirchner
Shuai Zhou
Kenneth A. Jones
Robert Metzger
Jacob Leach
Puneet Suvana
Mihir Tungare
Fatemeh Shahedipou-Sandvik
Keywords:
Doping
Electronic engineering
Voltage
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]