Group-V atoms exchange due to exposure of InP surface to AsH/sub 3/(+PH/sub 3/) measured by X-ray CTR scattering

We investigate samples of InP exposed to AsH/sub 3/(+PH/sub 3/), in order to study the effect of the purge sequence which appears in the OMVPE growth sequence of InP/InAs/InP structures. The purge sequence is unavoidable to grow heteroepitaxial layers which consist of different group-V atoms, and is considered to affect largely the structure of the interface. The experimental results show that the purge sequence does obstruct the abrupt interface formation.