Modeling free carrier absorption in silicon

The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 μm to 6 μm for n-type, and from 0.9 μm to 8 μm for p-type silicon. The new model is assessed ed by R 2 parameter and the sufficient fitting of the experimental data is presented.