Size-Dependent Characteristics of Indium-Seeded Si Nanowire Growth

Si nanowires were grown by a vapor–liquid–solid mechanism using indium catalyst particles with sizes between 10 and 200 nm.Transmission electron microscopy analysis indicates that the growth morphology of the nanostructures changes drastically whenthe particle size is only a few tens of nanometers. The larger wires are monocrystalline, growing with 111 orientation and limitedtapering. The simultaneously grown smaller wires appear strongly tapered, due to an accumulation of amorphous Si on thesidewalls, and present a poor crystalline quality. A model based on the solubility of Si in the In–Si eutectic is proposed to accountfor the size-dependent change of morphology.© 2008 The Electrochemical Society. DOI: 10.1149/1.2945800 All rights reserved.Manuscript submitted April 1, 2008; revised manuscript received May 14, 2008. Published July 16, 2008.