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Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaO x N y Gate Dielectric
Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaO x N y Gate Dielectric
2011
Taku Sato
Junichi Okayasu
Tomoo Yamanouchi
T. Yashiro
J Suzuki
Masahiko Takikawa
Keywords:
Gate dielectric
Leakage (electronics)
Optoelectronics
High-electron-mobility transistor
Electronic engineering
Materials science
low leakage
gan algan
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