Method for designing terahertz quantum well photoelectric detector

The invention provides a method for designing a terahertz quantum well photoelectric detector. The method comprises the steps that (1) according to wave length lambda p of peak response frequency of the terahertz quantum well photoelectric detector in device materials, a period P of an etching grating is designed to enable P equals to the lambda p; (2) electromagnetic field distribution inside the terahertz quantum well photoelectric detector under irradiation of incident light is calculated; (3) components which contribute to intersubband transition in the electromagnetic field distribution are extracted, integration is carried out on energy of the components in an active area, and the total energy It which contributes to the intersubband transition in the active area is obtained; (4) different grating heights h are set, the total energy It under the different grating heights h is calculated, and the grating height h when the total energy It is maximum is selected at the height of the etching grating. The method can effectively improve the performance of the terahertz quantum well photoelectric detector at the peak response frequency point, and has important significance on achievement and imaging application of high-performance terahertz quantum well photoelectric detectors.