Fabrication of self-assembled InGaAs, GaAs, and InAs quantum dots by chemical beam epitaxy

Abstract We report on the fabrication of self-assembled GaAs, InGaAs and InAs quantum dots (QD) on GaAs(100) via droplet epitaxy and S–K mode growth by chemical beam epitaxy (CBE). Triethylgallium, trimethylindium, monoethylarsine, and arsine were applied as source materials. GaAs and InGaAs quantum dots with diameter 50 nm and density 1×10 9 cm −2 were grown by Ga droplet formation and the successive supply of source materials without any pre-treatment steps prior to growth. InAs quantum dots were coherently assembled on a lattice-mismatched GaAs substrate without any indication of misfit dislocation in the Stranski–Krastanow (S–K) growth method. The areal density of 40 nm sized InAs islands was obtained up to 10 10 cm −2 by changing the deposition thickness. Our results demonstrate that CBE can be a very powerful method for the growth of self-assembled quantum dots.