First-principles prediction of the structural and electronic properties of zinc blende GaNxAs1−x alloys

Abstract To investigate the structural and electronic properties of zinc blende GaN x As 1− x alloys, we performed full-potential linearized augmented plane wave (FP-LAPW) calculations based on density functional theory. We assessed GaN x As 1− x alloys for 0≤ x ≤1 using 16-atom special quasi-random structures. The generalized gradient approximation (GGA) of Wu and Cohen was used as the exchange correlation potential to calculate the structural and electronic properties of GaN x As 1− x . In addition, the alternative GGA proposed by Engel and Vosko and the modified Becke–Johnson potential were used for better reproduction of the band structure and electronic properties. The equilibrium lattice parameters and bulk modulus were calculated and analyzed for binary and ternary alloys. The lattice constants for GaN x As 1− x positively deviate from Vegard's law with an upward bowing parameter of −0.4708 A. All our materials are direct-bandgap semiconductors for which the valence band maximum is located at Γ v and the conduction band minimum at Γ c . We observed that the direct bandgap of GaN x As 1− x increases nonlinearly with x . To shed light on the bandgap trend for increasing nitrogen concentrations in GaN x As 1− x , we used the atoms-in-molecule formalism. Special attention was paid to the increase in charge transfer for the nitrogen atom and to ionicity as a function of increasing x concentration.