Breakdown voltage protection for transistors

The invention concerns a semiconductor arrangement for influencing the breakdown voltage of transistors, with a counter-electrode arranged above a space charge region separated from said space charge region by an oxide layer (26), which counter-electrode is at a potential determined by a voltage divider (R1, R2) and applied between a base (A) and a collector (K). The invention provides for the counter-electrode to be formed from two electrode plates isolated from each other, whereby a first electrode plate (28) overlaps a junction (30) between a highly-doped n collector region (22) and a weakly-doped n collector region (14), and overlaps the weakly-doped n collector region (14) and a junction (32) between the weakly-doped n collector region (14) and a p base region (20), and a second electrode plate (34) is partly bonded above the oxide layer (26) and partly bonded to the highly-doped n collector region (22).