The growth and characterization of AlxGa1-xAs/Ge heterostructures

The fabrication of Al x Ga 1-x As/Ge tandem solar cells requires a trade-off in the deposition of the Al x Ga 1-x As active layer between low-growth temperature for minimum interdiffusion and high-growth temperature for maximum crystalline perfection. In this paper, we report the results of different technical analyses of Al 0.85 Ga 0.15 As/Al 0.08 Ga 0.92 As/Ge heterostructuresgrown by metallorganic chemicxal vapor deposition in the temperature range 660°C

Keywords:

• Inorganic compound
• Thin film
• Atmospheric temperature range
• Fabrication
• X-ray absorption spectroscopy
• Heterojunction
• Analytical chemistry
• Active layer
• Chemical vapor deposition
• Materials science

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