Method of manufacturing the insulated gate field effect transistor

A MOS field effect transistor comprises a substrate (1) of a first conductivity type, source and drain regions of a second conductivity type having a lightly doped region and a heavily doped region therein being deposited by an epitaxial growth technique respectively in a source forming region (4) and a drain forming region (3) formed by etching the substrate, a gate insulated film (2) provided on a surface of the substrate (1) and a gate (5) provided on the gate insulated film having a relatively small overlap with each of the source region and drain region.