Fabrication of semiconductor resistors in a semiconductor device with metal gate structures by increasing the etch resistivity of the resistors

The semiconductor device (100) comprising: a transistor element (150) having a gate electrode structure (110a) having a gate dielectric (111) with large e and a metal-containing electrode material (118) over the gate dielectric material (111) is formed with a large e; and a resistor (110b) having a semiconductor material (113) having an upper portion (113u) and a lower portion (113l), wherein the upper portion (113u) comprises an electrical inert substance places (104b), so that the upper portion (113u) compared to the lower portion (113l) has an increased etch resistance.