Semiconductor component with trench transistors and method for producing such a component

A method of manufacturing a semiconductor device, comprising: - Forming incisions in a first side of a semiconductor material; - Forming a thick oxide layer on the incisions and on the first side; Masking a part of the first side and the cuts using a first mask; - doping the semiconductor material by implantation through the thick oxide layer while the first mask is present; Removing at least a portion of the thick oxide layer while leaving the first mask and thereafter - Forming a thin oxide layer on the first page.