Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

Abstract The influence of native point defect concentration on oxygen precipitation processes in Si O i system has been investigated. The supersaturation degree of native point defects in the bulk of the silicon wafers was varied by changing the conditions of the preliminary oxidation. It has been shown supersaturation of a certain type of native point defect can retard the oxygen precipitation process and change the picture of defect formation.