Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors

A model has been developed to predict cycling‐induced threshold voltage shifts of silicon‐oxide‐nitride‐oxide‐semiconductor transistors. The model is based on the mechanism of hole transport through the tunnel oxide. It has been experimentally demonstrated that the model accurately predicts cycling behavior for a wide range of cycling parameters. Only two simple experiments are required to determine the model parameters.