Synthesis of Bi2S3 with different sulfur content by conventional high temperature solid state solvothermal route

Bismuth sulfide (Bi2S3) is a binary chalcogenide compound material belonging to V-VI group of semiconductors. Because of its direct band gap of 1.3 eV and high figure of merit (ZT) value, it is widely used as a thermo electronic-cooling material based on the Peltier effect. The electrical and optical property of Bi2S3 material is strongly dependent on stoichiometric composition, defect chemistry and structure. In this study, we have synthesized Bi2Sx (x = 3.15, 3.30, 3.45) compound material with different sulfur content by conventional high temperature solid state solvothermal reaction of bismuth and sulfur. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDXS) analysis of synthesized compound materials were carried out to observe crystallinity, surface morphology and composition of elements in the compound. The optical analysis revealed that energy band gap decreases with increase of sulfur content.