Monolithic GaAs current-sensitive cryogenic preamplifier for calorimetry applications.

We have realized low-noise monolithic GaAs preamplifiers using ion- implanted technology , to operate under low temperature and high radiation field conditions. The evaluation of noise, amplitude and timing distributions of a batch taken after first mass-production run is presented. The current-sensitive preamplifier is linear up to 8 mA of input current and able to cope a 2.2 nF detector capacitance, showing fast response ( GBW product ∼ 1.7GHz) and very low series noise. Very good noise performance at LAr temperature is obtained by using large area MESFET ( l · w = 3. 24000μm 2 ) as a head transistor, which exhibits at 8mA standing current and only 10mW power dissipation, intrinsic gain μ = g m · r ds = 15 and noise referred to the input 0.30 ÷ 0.35 H z n ¯ V According to our estimation, second stage noise contribution is negligible. Radiation damage from neutrons and γ-irradiations as well as protection network against HV discharges are discussed.