Surface modification of Si(111) substrate by iron ion implantation: Growth of a thin β-FeSi2 layer

The processes in the synthesis of a thin layer of the semiconducting iron silicide (β-FeSi2) on the surface of a single-crystal Si(111) substrate by implantation of 195 keV Fe ions with a dose of 8×1017cm−2 are investigated. Using Rutherford backscattering spectrometry, x-ray diffraction and cross-sectional transmission electron microscopy, the structure and the phase composition of the synthesized layers are studied. The infrared transmittance spectra show the absorption at 310cm−1 as an indication of the initial nucleation of β-FeSi2 precipitates during the implantation of iron into silicon substrate.