Electric dipole spin resonance induced by hole k-linear Rashba effect in planar Ge

Hole-based qubits in planar Ge have received considerable attention due to the strong spin-orbit coupling (SOC), which is at the heart of fast and all-electric qubit control via electric dipole spin resonance (EDSR). However, most studies on hole-based EDSR have been limited to Dresselhaus SOC that is absent in Ge, which conflicts with the recent experimental observations. Here, we theoretically demonstrate that the newly-discovered hole k-linear Rashba SOC in Ge/Si quantum wells is necessarily harnessed to implement EDSR, enabling fast qubit manipulation. We investigate the Rabi frequency caused by k-linear Rashba SOC within the single-band approximation and the results are in agreement with the experiments. Moreover, by using the atomistic pseudopotential calculations, we further discuss the Rabi frequency under different gate electric fields as well as biaxial strains. Our findings thus open new perspectives for the understanding of EDSR in planar Ge, which is vitally important toward future semiconducting quantum computation.