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Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
2017
Yamaguchi Yutaro
Shinjo Shintaro
Yamanaka Koji
Oishi Toshiyuki
Keywords:
Leakage (electronics)
Materials science
High-electron-mobility transistor
Electronic engineering
Optoelectronics
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