Investigations of CuInSe2 Thin Films and Contact
1990
We study the properties of CuInSe2 thin films grown on glass and on Mo substrates. The investigation is carried out with X-ray diffraction, RBS, XTEM and SEM. p]CuInSe2/Mo contact stability is investigated after annealing at 600°C. RBS reveals that this treatment induces an interdiffusion between the metal and the chalcopyrite. To clarify this reaction, we have investigated the individual thin-film couples upon annealing. RBS and X-ray diffraction reveal insignificant interaction between Mo/Cu and Mo/In, but Se reacts with Mo.
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