Exploratory study of the polycrystalline n-silicon photoelectrode by the scanning laser spot technique

Abstract An apparatus was developed which allows scanning of semiconductor/electrolyte interfaces with a small laser spot and measuring the local photocurrent. This apparatus was used for studying the polycrystalline n-Si electrode in methanolic ferrocene solutions. Measurements at different electrode potentials reveal the presence of two different types of structural defects, observable by a local photocurrent decrease, i.e. grain boundaries and surface imperfections.