DESIGN OF FAST SWITCHING IGBT GATE DRIVER FOR HIGH RATED MODULES

The past decades Insulated Gate Bipolar Transistors (IGBT) have witnessed the continuous increase in sinusoidal pulse width modulation (SPWM) inverter's switching frequency. For sequential switching of three phase inverters a high frequency isolated fast switching IGBT driver circuit is recommended.. High voltage ratings are attractive for pulsed power and high-voltage switch-mode inverter applications. In this a push-pull converter topology is implemented for 1200V high voltage with 10KHz to 50KHz switching frequency for the IGBT driver circuit. High switching frequency provides fast transient response, small component size and high power density. The present circuit produces low gate drive loss, fast switching speed and has immunity to false trigger IGBT driver circuit function is verified with CRO external results