Old Web
English
Sign In
Acemap
>
Paper
>
Interface structure and epitaxial growth of M-plane GaN(11̅00) on tetragonal LiA1O2(100) substrates
Interface structure and epitaxial growth of M-plane GaN(11̅00) on tetragonal LiA1O2(100) substrates
2018
A. Trampert
Tian-Yu Liu
P Waitereit
O. Brandt
K. H. Ploog
Keywords:
Crystallography
Epitaxy
Tetragonal crystal system
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
1
References
0
Citations
NaN
KQI
[]