Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes

This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.