Analysis of electrical properties of forward-to-open (Ti,Cu)Ox memristor rectifier with elemental gradient distribution prepared using (multi)magnetron co-sputtering process

Abstract The paper presents a discussion on memristive-like properties observed in metal/semiconducting-oxide/metal structure containing a semiconducting (Ti x Cu 1-x )Ox thin film with asymmetrical elemental Cu distribution over the thin film thickness. The thin film was prepared using a combinatorial multi-magnetron sputtering process. Based on current-to-voltage electrical investigations, a sharp forward-to-open rectifying behaviour was observed with a hysteresis loop in the forward bias conditions only. Detailed structure and elemental profile investigations allowed to propose explanation of observed type of resistive transition.