TEM characterization of Si films grown on 6H–SiC (0001) C-face

Abstract Si films with 〈111〉 preferred orientation have been prepared on 6H–SiC (0001) C-face by low-pressure chemical vapor deposition. The high-resolution transmission electron microscopy and the selected area electron diffraction results indicate that the Si film has epitaxial connection with the 6H–SiC substrate and the parallel-plane relationship of Si/6H–SiC heterojunction is (111) Si //(0001) 6H–SiC . Misfit dislocation array is clearly observed at the Si/6H–SiC interface, which accommodates the most of lattice mismatch strain and make the lattice coincident at the Si/6H–SiC interface.