Rapid and high sensitive structure evaluation of ferroelectric films using micro-Raman spectroscopy: In-situ observation of stress accumulation and release in PbTiO3 films during first cooling process

Stress changes of the (100)/(001)-oriented PbTiO3 (PT) films deposited on MgO(100), Pt(100)/MgO(100) and Pt(111)/Ti/SiO2/Si(100) substrates under the cooling process after film deposition was investigated by in-situ observation using metal organic chemical vapor deposition (MOCVD)-Raman spectroscopy combined system. The stress changed from compressive to tensile near Tc and large compressive stress made high c-domain volume fraction. It was made clear that the stress condition at Tc affects the c-domain volume fraction at room temperature (R.T.). These results indicate that in-situ Raman spectroscopy measurement is useful tool for monitoring the stress state under the cooling process.