A 20 ppm/○C Current Reference with improved ZTC Characteristic for SerDes application

This paper presents a temperature insensitive current reference for SerDes application using SiGe BiCMOS technology. Modified zero temperature coefficient (ZTC) characteristic of MOS transistor is proposed and implemented in this design. Process variation effects caused by mismatch and temperature drift are discussed and minimized. Implemented in 0.18 μm SiGe BiCMOS technology, test have shown that an average current sensitivity of 20 ppm/○C (-15 to 130○C) is achieved with 3 V power supply.