Near-Field Electron Energy Loss Spectroscopy in Porous Silicon
2000
First results of an Electron Energy Loss Spectroscopy in the Near Field (NFEELS) mode of n+ porous silicon are described here. Sequences of EELS spectra in the low loss energy range (0–30 eV) were recorded, using a scanning transmission electron microscope, as the e-beam was scanned across a nano-hole surrounded by Si platelets. This technique is shown to be very sensitive to spectral and spatial changes in the electromagnetic field distribution outside the surface of nanoparticles, governed by their local nature and shape.
Keywords:
- Materials science
- Electron energy loss spectroscopy
- Conventional transmission electron microscope
- Energy-dispersive X-ray spectroscopy
- Energy filtered transmission electron microscopy
- Nuclear magnetic resonance
- Electron beam-induced deposition
- Scanning transmission electron microscopy
- Analytical chemistry
- Near and far field
- Electron microscope
- Porous silicon
- Atomic physics
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