Variation of structure and band gap for N doped Cu 2 O films deposited with ceramic target

Abstract With ceramic target, N doped Cu 2 O films were deposited by Radio-Frequency magnetron sputtering. The structural, optical and electrical properties were studied. Along with the increase of nitrogen flow rate, the preferred orientation of Cu 2 O films varied from (111) plane to (200) plane. In addition, may be due to the inhibition of oxygen vacancy by using Cu 2 O target, an obvious optical band gap narrowing was observed. Hall results indicated that the resistivity decreased sharply with the increase of carrier concentration. And the lowest value 2.1 Ωcm was obtained when the nitrogen flow rate was increased to 20 sccm. However, due to the defects which induced by N doping, the hall mobility is decreased slightly. X-ray photoelectron spectra results further demonstrated the formation of Cu 2 O films without other phases.