A new compact model for junctions in advanced CMOS technologies
2005
We present a new compact model for the junction capacitances and leakage currents in deep-submicron CMOS technologies. The model contains Shockley-Read-Hall generation/recombination, trap-assisted tunneling, band-to-band-tunneling, and avalanche breakdown. It has been validated for a wide range of bias and temperature, for NMOS and PMOS junctions, and for different CMOS generations
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
4
References
13
Citations
NaN
KQI