In-situ ion-beam annealing of damage in GaAs during O implantation and O-site determination by 18O(p,α) 15N nuclear reaction

Abstract Damage introduced by 40 keV 16,18 O implantation in the crystalline GaAs substrate is investigated by the Rutherford backscattering spectroscopy (RBS) channeling method and cross-sectional transmission electron microscopy (X-TEM). Anomalously little damage was formed at room temperature ( 15 /cm 2 dose sample, the RBS channeling yield increases with the annealing temperature, due to the formation of stacking faults, confirmed by X-TEM observation. Yield increase with the temperature was not observed for lower 1 × 10 15 /cm 2 and higher 1 × 10 16 /cm 2 doses. A possible site occupied by 18 O atoms after annealing is determined by 18 O(p,α) 15 N nuclear reaction. The ratios of channeling-yields to the corresponding random-yields for α-particles emitted from 18 O atoms were compared with simulated results.