Metallization of sub-30 nm interconnects: Comparison of different liner/seed combinations

Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.