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Channel Doped SiC-MOSFETs
Channel Doped SiC-MOSFETs
2000
Shinji Ogino
T Oikawa
Katsunori Ueno
Keywords:
Induced high electron mobility transistor
Ion implantation
Composite material
Strain engineering
Doping
Materials science
Field-effect transistor
Communication channel
Electronic engineering
Optoelectronics
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