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Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)
Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)
2011
B. C. Wang
San-Lein Wu
S. J. Chang
Cheng-Tung Huang
O. Cheng
Keywords:
Nuclear magnetic resonance
Oxide
Materials science
Optoelectronics
Correction
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